DocumentCode
758668
Title
Simple `reconciliation´ MOSFET model valid in all regions
Author
Tsividis, Y. ; Suyama, K. ; Vavelidis, K.
Author_Institution
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
Volume
31
Issue
6
fYear
1995
fDate
3/16/1995 12:00:00 AM
Firstpage
506
Lastpage
508
Abstract
A single-expression MOSFET model is proposed. The model is related to a recently published one, but includes explicitly the threshold voltage at any value of the source-substrate bias. Very good accuracy in all regions, including moderate inversion, is demonstrated. The model reduces to well established expressions in particular regions
Keywords
MOSFET; semiconductor device models; MOSFET model; moderate inversion; single-expression model; source-substrate bias; threshold voltage;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950256
Filename
375855
Link To Document