Title :
Simple `reconciliation´ MOSFET model valid in all regions
Author :
Tsividis, Y. ; Suyama, K. ; Vavelidis, K.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
fDate :
3/16/1995 12:00:00 AM
Abstract :
A single-expression MOSFET model is proposed. The model is related to a recently published one, but includes explicitly the threshold voltage at any value of the source-substrate bias. Very good accuracy in all regions, including moderate inversion, is demonstrated. The model reduces to well established expressions in particular regions
Keywords :
MOSFET; semiconductor device models; MOSFET model; moderate inversion; single-expression model; source-substrate bias; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950256
