Title :
Investigation of a new InGaP-InGaAs pseudomorphic double doped-channel heterostructure field-effect transistor (PDDCHFET)
Author :
Chuang, Hung-Ming ; Cheng, Shiou-Ying ; Chen, Chun-Yuan ; Liao, Xin-Da ; Liu, Rong-Chau ; Liu, Wen-Chau
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan
Abstract :
An interesting new InGaP-InGaAs pseudomorphic double doped-channel heterostructure field-effect transistor (PDDCHFET) is fabricated and demonstrated. Due to the employed InGaAs double doped channel (DDC) structure and Schottky behaviors of InGaP "insulator," good dc properties including higher turn-on voltage, lower leakage current, better linearity, and good RF performances are obtained. In addition, the experimental results are fitted well with theoretical simulation data based on a two-dimensional (2-D) simulator. Moreover, the studied device exhibits relatively negligible temperature-dependent characteristics over a wide operating temperature region (300\n\n\t\t
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; junction gate field effect transistors; 300 to 450 K; DC characteristics; InGaP-InGaAs; InGaP-InGaAs PDDCHFET; RF characteristics; high-temperature microwave electronics; leakage current; linearity; pseudomorphic double doped channel heterostructure field effect transistor; temperature dependence; turn-on voltage; two-dimensional simulation; HEMTs; Indium gallium arsenide; Insulation; Leakage current; Linearity; MODFETs; Radio frequency; Temperature; Two dimensional displays; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.815145
