DocumentCode
758703
Title
Mid-infra-red InGaAs light-emitting diodes for optical gas sensing grown on lattice-mismatched substrates
Author
Grietens, B. ; Murti, M.R. ; Van Hoof, C. ; Borghs, G.
Author_Institution
IMEC, Leuven, Belgium
Volume
31
Issue
6
fYear
1995
fDate
3/16/1995 12:00:00 AM
Firstpage
502
Lastpage
503
Abstract
InGaAs-InAlAs light-emitting diodes were grown on lattice-mismatched GaAs substrates by molecular beam epitaxy. This makes it possible to tune the emission to the desired wavelength by changing the composition of the grown layers. The authors´ diodes exhibit efficient room-temperature emission at 1.9 μm, necessary for optical sensing of water vapour
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gas sensors; indium compounds; infrared sources; light emitting diodes; molecular beam epitaxial growth; optical sensors; 1.9 micron; GaAs; InGaAs-InAlAs; MBE growth; lattice-mismatched GaAs substrates; light-emitting diodes; mid IR region; mid-infra-red LED; molecular beam epitaxy; optical gas sensing; room-temperature emission; water vapour sensing;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950325
Filename
375858
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