Title :
Metal-insulator-semiconductor structures of InSb/SiO2 with very low interface trap density
Author_Institution :
Defence Res. Agency, Malvern, UK
fDate :
3/16/1995 12:00:00 AM
Abstract :
MIS structures fabricated using InSb and silicon dioxide with an interface trap density as low as 4×1010 cm-2 eV-1 have been achieved. This is about one order of magnitude less than any other reported figure for the InSb MIS system. Both capacitance/voltage and conductance techniques have been employed to study the interface properties of InSb/SiO2. A low state density of <1010 cm-2 was observed and the dielectric breakdown field of the oxide was greater than 4 mV cm-1
Keywords :
III-V semiconductors; MIS structures; electric breakdown; electron traps; hole traps; indium compounds; interface states; semiconductor-insulator boundaries; silicon compounds; InSb-SiO2; MIS structures; capacitance/voltage techniques; conductance techniques; dielectric breakdown field; interface properties; interface trap density; low state density; metal-insulator-semiconductor structures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950346
