• DocumentCode
    758722
  • Title

    Metal-insulator-semiconductor structures of InSb/SiO2 with very low interface trap density

  • Author

    Khaleque, F.

  • Author_Institution
    Defence Res. Agency, Malvern, UK
  • Volume
    31
  • Issue
    6
  • fYear
    1995
  • fDate
    3/16/1995 12:00:00 AM
  • Firstpage
    500
  • Lastpage
    502
  • Abstract
    MIS structures fabricated using InSb and silicon dioxide with an interface trap density as low as 4×1010 cm-2 eV-1 have been achieved. This is about one order of magnitude less than any other reported figure for the InSb MIS system. Both capacitance/voltage and conductance techniques have been employed to study the interface properties of InSb/SiO2. A low state density of <1010 cm-2 was observed and the dielectric breakdown field of the oxide was greater than 4 mV cm-1
  • Keywords
    III-V semiconductors; MIS structures; electric breakdown; electron traps; hole traps; indium compounds; interface states; semiconductor-insulator boundaries; silicon compounds; InSb-SiO2; MIS structures; capacitance/voltage techniques; conductance techniques; dielectric breakdown field; interface properties; interface trap density; low state density; metal-insulator-semiconductor structures;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950346
  • Filename
    375859
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=758722