Title :
Trends in the ultimate breakdown strength of high dielectric-constant materials
Author :
McPherson, Joe W. ; Kim, Jinyoung ; Shanware, Ajit ; Mogul, Homi ; Rodriguez, John
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
The ultimate breakdown strength Ebd of a dielectric material is found to decrease as the dielectric-constant k increases. A thermochemical description of the ultimate breakdown strength of high-k dielectrics suggests that Ebd should reduce approximately as (k)-12/ over a wide range of dielectric materials while the field-acceleration parameter γ should increase in similar but inverse manner. New time-dependent dielectric breakdown (TDDB) data are presented over a wide range of dielectric materials and Ebd was found to decrease as (k)-0.65 while γ increases as (k)0.66. The good agreement between thermochemical theory and high-k TDDB observations suggests that the very high local electric field (Lorentz-relation/Mossotti-field) in high-k dielectrics tends to distort/weaken the polar molecular bonds making them more susceptible to bond breakage by standard Boltzmann processes and/or by hole-capture and thus lowers the breakdown strength.
Keywords :
MIS devices; electric breakdown; electric strength; permittivity; semiconductor device reliability; Boltzmann processes; Lorentz-relation/Mossoffi-field; breakdown strength; field-acceleration parameter; high dielectric-constant materials; local electric field; polar molecular bonds; thermochemical description; time-dependent dielectric breakdown; ultimate breakdown strength; Breakdown voltage; CMOS technology; Capacitors; Dielectric breakdown; Dielectric films; Dielectric materials; Electric breakdown; High K dielectric materials; High-K gate dielectrics; Testing;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.815141