DocumentCode
758770
Title
Delta-doping-enhanced InGaAs/InAlAs heterobarrier diodes
Author
Cerniansky, M. ; Allsopp, D.W.E. ; Hopkinson, M.
Author_Institution
Dept. of Electron., York Univ., UK
Volume
31
Issue
6
fYear
1995
fDate
3/16/1995 12:00:00 AM
Firstpage
493
Lastpage
494
Abstract
Modification of the effective conduction-band offset in InGaAs/InAlAs isotype heterojunctions by incorporating, during epitaxial growth, a doping dipole formed by alternate n+, p+ delta (δ-) doping is demonstrated. Greatly improved current rectification is found when the dipole polarity enhances the potential barrier
Keywords
III-V semiconductors; aluminium compounds; conduction bands; doping profiles; indium compounds; molecular beam epitaxial growth; p-n heterojunctions; rectification; semiconductor diodes; semiconductor doping; solid-state rectifiers; InGaAs-InAlAs; conduction band offset; current rectification; delta doping; doping dipole; epitaxial growth; heterobarrier diodes; isotype heterojunctions; potential barrier enhancement;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950314
Filename
375864
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