Title :
Delta-doping-enhanced InGaAs/InAlAs heterobarrier diodes
Author :
Cerniansky, M. ; Allsopp, D.W.E. ; Hopkinson, M.
Author_Institution :
Dept. of Electron., York Univ., UK
fDate :
3/16/1995 12:00:00 AM
Abstract :
Modification of the effective conduction-band offset in InGaAs/InAlAs isotype heterojunctions by incorporating, during epitaxial growth, a doping dipole formed by alternate n+, p+ delta (δ-) doping is demonstrated. Greatly improved current rectification is found when the dipole polarity enhances the potential barrier
Keywords :
III-V semiconductors; aluminium compounds; conduction bands; doping profiles; indium compounds; molecular beam epitaxial growth; p-n heterojunctions; rectification; semiconductor diodes; semiconductor doping; solid-state rectifiers; InGaAs-InAlAs; conduction band offset; current rectification; delta doping; doping dipole; epitaxial growth; heterobarrier diodes; isotype heterojunctions; potential barrier enhancement;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950314
