Analytical solutions to the one-dimensional oxide-silicon-oxide system

Analytical solutions to the one-dimensional (1-D) double-side gated oxide-silicon-oxide (OSO) system are derived. The solution space, parameterized by the gate bias conditions, is divided into two separate regions, admitting either a "zero-field" or a "zero-potential" solution. The boundary between the two regions is defined by the "zero-potential and zero-field" solution. Some general implications of the solutions are discussed. The "saturation" values of the body potential for the "zero-field" solution and the body electric field for the "zero-potential" solution are derived. The formalism is also applied to determine a single-gate silicon-on-insulator equivalence of a double-gate metal-oxide-semiconductor capacitor.