Title :
Semisuperjunction MOSFETs: new design concept for lower on-resistance and softer reverse-recovery body diode
Author :
Saito, Wataru ; Omura, Ichiro ; Aida, Satoshi ; Koduki, Shigeo ; Izumisawa, Masaru ; Ogura, Tsuneo
Author_Institution :
Semicond. Co., Toshiba Corp., Kawasaki, Japan
Abstract :
A new superjunction (SJ) structure offering remarkable advantages compared with the conventional SJ structure is proposed and demonstrated for a power-switching device. In the proposed structure (semi-SJ structure), an n-doped layer is connected to the bottom of the SJ structure. According to the results of experiment and simulation, the semi-SJ structure has both lower on-resistance and softer recovery of body diode than conventional SJ MOSFETs. The fabricated semi-SJ MOSFETs with breakdown voltage of 690 V realize on-resistance 28% lower than that of the conventional SJ MOSFET with same aspect ratio. The softness factor of the body diode is also improved by a factor of five. The proposed MOSFET is very attractive for H bridge topology applications, such as switching mode power supplies and small inverter systems, thanks to the low on-resistance and the soft recovery body diode.
Keywords :
MOSFET; power semiconductor switches; semiconductor device breakdown; 690 V; H bridge topology; breakdown voltage; design concept; on-resistance; power-switching device; reverse-recovery body diode; semi-SJ MOSFETs; semisuperjunction MOSFETs; softer recovery; softness factor; switching mode power supplies; Associate members; Circuits; Costs; Electromagnetic interference; Epitaxial growth; Fabrication; Inverters; MOSFETs; Power supplies; Semiconductor diodes;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.815126
