Title :
Characteristics of multistack multiquantum barrier and its application to graded-index separate confinement heterostructure lasers
Author :
Chyi, Jen-Inn ; Wang, Shin-Kai ; Gau, Jing-Homk ; Shieh, Jia-Lin ; Pan, Jen-Wei
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
fDate :
3/1/1996 12:00:00 AM
Abstract :
The enhancement of electron barrier height by multistack multiquantum barrier structure is simulated using the transfer matrix method. The validity and feasibility of this concept is verified by the experimental results on GaAs-AlAs multistack multiquantum barriers. Based on the simulated results, both 0.78 and 1.3 μm graded-index separate confinement heterostructure (GRIN-SCH) lasers with predicted enhanced carrier and optical confinements using graded multistack multiquantum barriers are designed. Lower threshold current, higher modulation bandwidth as well as higher characteristic temperature are expected for these lasers
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; laser beams; optical modulation; quantum well lasers; transfer function matrices; 0.78 mum; 1.3 mum; GRIN-SCH lasers; GaAs-AlAs; characteristic temperature; electron barrier height; enhanced carrier confinements; graded multistack multiquantum barriers; graded-index separate confinement heterostructure lasers; modulation bandwidth; multistack multiquantum barrier; optical confinements; threshold current; transfer matrix method; Bandwidth; Carrier confinement; Electrons; High speed optical techniques; Optical design; Optical modulation; Predictive models; Reflectivity; Temperature; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
