Characteristics of multistack multiquantum barrier and its application to graded-index separate confinement heterostructure lasers

Author

Chyi, Jen-Inn ; Wang, Shin-Kai ; Gau, Jing-Homk ; Shieh, Jia-Lin ; Pan, Jen-Wei

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan

Volume

32

Issue

3

fYear

1996

fDate

3/1/1996 12:00:00 AM

Firstpage

442

Lastpage

447

Abstract

The enhancement of electron barrier height by multistack multiquantum barrier structure is simulated using the transfer matrix method. The validity and feasibility of this concept is verified by the experimental results on GaAs-AlAs multistack multiquantum barriers. Based on the simulated results, both 0.78 and 1.3 μm graded-index separate confinement heterostructure (GRIN-SCH) lasers with predicted enhanced carrier and optical confinements using graded multistack multiquantum barriers are designed. Lower threshold current, higher modulation bandwidth as well as higher characteristic temperature are expected for these lasers

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; laser beams; optical modulation; quantum well lasers; transfer function matrices; 0.78 mum; 1.3 mum; GRIN-SCH lasers; GaAs-AlAs; characteristic temperature; electron barrier height; enhanced carrier confinements; graded multistack multiquantum barriers; graded-index separate confinement heterostructure lasers; modulation bandwidth; multistack multiquantum barrier; optical confinements; threshold current; transfer matrix method; Bandwidth; Carrier confinement; Electrons; High speed optical techniques; Optical design; Optical modulation; Predictive models; Reflectivity; Temperature; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.485395

Filename

485395