DocumentCode :
758912
Title :
A capacitor cross-coupled common-gate low-noise amplifier
Author :
Zhuo, W. ; Li, X. ; Shekhar, S. ; Embabi, S.H.K. ; De Gyvez, J. Pineda ; Allstot, D.J. ; Sanchez-Sinencio, E.
Author_Institution :
Qualcomm Inc., San Diego, CA, USA
Volume :
52
Issue :
12
fYear :
2005
Firstpage :
875
Lastpage :
879
Abstract :
The conventional common-gate low-noise amplifier (CGLNA) exhibits a relatively high noise figure (NF) at low operating frequencies relative to the MOSFET fT, which has limited its adoption notwithstanding its superior linearity, input matching, and stability compared to the inductively degenerated common-source LNA (CSLNA). A capacitor cross-coupled gm-boosting scheme is described that improves the NF and retains the advantages of the CGLNA topology. The technique also enables a significant reduction in current consumption. A fully integrated capacitor cross-coupled CGLNA implemented in 180-nm CMOS validates the gm-boosting technique. It achieves a measured NF of 3.0 dB at 6.0 GHz and consumes only 3.6 mA from 1.8 V; the measured input-referred third-order intercept ( IIP3) value is 11.4 dBm. The capacitor cross-coupled gm-boosted CGLNA is attractive for low-power fully integrated applications in fine-line CMOS technologies.
Keywords :
MMIC amplifiers; low noise amplifiers; 1.8 V; 180 nm; 3 dB; 3.6 mA; 6 GHz; MOSFET; RF integrated circuits; common-gate amplifier; common-gate low-noise amplifier; current consumption reduction; fine-line CMOS technology; gm-boosting scheme; integrated capacitor; noise figure; CMOS technology; Capacitors; Frequency; Impedance matching; Linearity; Low-noise amplifiers; MOSFET circuits; Noise figure; Noise measurement; Stability; Common-gate amplifier; RF integrated circuits; low-noise amplifier (LNA); noise figure (NF);
fLanguage :
English
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-7747
Type :
jour
DOI :
10.1109/TCSII.2005.853966
Filename :
1556810
Link To Document :
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