DocumentCode :
758938
Title :
Analytical formulas for the optical gain of quantum wells
Author :
Makino, Toshihiko
Author_Institution :
Bell-Northern Res., Ottawa, Ont., Canada
Volume :
32
Issue :
3
fYear :
1996
fDate :
3/1/1996 12:00:00 AM
Firstpage :
493
Lastpage :
501
Abstract :
Analytical expressions for the quantized energy levels in quantum wells, the optical gain, the differential optical gain, and the linewidth enhancement factor are presented based on a simple parabolic-band gain model. Explicit formulas show clearly the dependence of these factors on well width, doping, and photon energy. The optical gain in the form of g=g0 In(N/N0) is derived using explicit approximations in the Fermi functions, where g0 is the proportionality constant, N is the injected carrier density, and N 0 is the transparency carrier density. The approximate formulas are shown to provide not only an efficient way of computing the gain-related parameters but also a convenient way of getting physical insights into the overall interplay of quantum well parameters
Keywords :
Fermi level; approximation theory; carrier density; laser theory; quantum well lasers; semiconductor device models; spectral line breadth; Fermi functions; analytical formulas; approximate formulas; differential optical gain; explicit approximations; gain-related parameters; injected carrier density; linewidth enhancement factor; optical gain; parabolic-band gain model; photon energy; physical insights; proportionality constant; quantized energy levels; quantum well lasers; quantum well parameters; quantum wells; transparency carrier density; well width; Capacitive sensors; Charge carrier density; Distributed feedback devices; Laser feedback; Laser theory; Quantum computing; Quantum well devices; Quantum well lasers; Threshold current; Waveguide lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.485401
Filename :
485401
Link To Document :
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