DocumentCode
758938
Title
Analytical formulas for the optical gain of quantum wells
Author
Makino, Toshihiko
Author_Institution
Bell-Northern Res., Ottawa, Ont., Canada
Volume
32
Issue
3
fYear
1996
fDate
3/1/1996 12:00:00 AM
Firstpage
493
Lastpage
501
Abstract
Analytical expressions for the quantized energy levels in quantum wells, the optical gain, the differential optical gain, and the linewidth enhancement factor are presented based on a simple parabolic-band gain model. Explicit formulas show clearly the dependence of these factors on well width, doping, and photon energy. The optical gain in the form of g=g0 In(N/N0) is derived using explicit approximations in the Fermi functions, where g0 is the proportionality constant, N is the injected carrier density, and N 0 is the transparency carrier density. The approximate formulas are shown to provide not only an efficient way of computing the gain-related parameters but also a convenient way of getting physical insights into the overall interplay of quantum well parameters
Keywords
Fermi level; approximation theory; carrier density; laser theory; quantum well lasers; semiconductor device models; spectral line breadth; Fermi functions; analytical formulas; approximate formulas; differential optical gain; explicit approximations; gain-related parameters; injected carrier density; linewidth enhancement factor; optical gain; parabolic-band gain model; photon energy; physical insights; proportionality constant; quantized energy levels; quantum well lasers; quantum well parameters; quantum wells; transparency carrier density; well width; Capacitive sensors; Charge carrier density; Distributed feedback devices; Laser feedback; Laser theory; Quantum computing; Quantum well devices; Quantum well lasers; Threshold current; Waveguide lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.485401
Filename
485401
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