• DocumentCode
    758938
  • Title

    Analytical formulas for the optical gain of quantum wells

  • Author

    Makino, Toshihiko

  • Author_Institution
    Bell-Northern Res., Ottawa, Ont., Canada
  • Volume
    32
  • Issue
    3
  • fYear
    1996
  • fDate
    3/1/1996 12:00:00 AM
  • Firstpage
    493
  • Lastpage
    501
  • Abstract
    Analytical expressions for the quantized energy levels in quantum wells, the optical gain, the differential optical gain, and the linewidth enhancement factor are presented based on a simple parabolic-band gain model. Explicit formulas show clearly the dependence of these factors on well width, doping, and photon energy. The optical gain in the form of g=g0 In(N/N0) is derived using explicit approximations in the Fermi functions, where g0 is the proportionality constant, N is the injected carrier density, and N 0 is the transparency carrier density. The approximate formulas are shown to provide not only an efficient way of computing the gain-related parameters but also a convenient way of getting physical insights into the overall interplay of quantum well parameters
  • Keywords
    Fermi level; approximation theory; carrier density; laser theory; quantum well lasers; semiconductor device models; spectral line breadth; Fermi functions; analytical formulas; approximate formulas; differential optical gain; explicit approximations; gain-related parameters; injected carrier density; linewidth enhancement factor; optical gain; parabolic-band gain model; photon energy; physical insights; proportionality constant; quantized energy levels; quantum well lasers; quantum well parameters; quantum wells; transparency carrier density; well width; Capacitive sensors; Charge carrier density; Distributed feedback devices; Laser feedback; Laser theory; Quantum computing; Quantum well devices; Quantum well lasers; Threshold current; Waveguide lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.485401
  • Filename
    485401