Title :
GaInAs/GaAs quantum wire laser structures with strong gain coupling defined by reactive ion etching
Author :
Orth, A. ; Zull, H. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution :
Wurzburg Univ., Germany
fDate :
3/16/1995 12:00:00 AM
Abstract :
Gain-coupled GaInAs/GaAs quantum wire lasers have been realised with wire widths down to 70 nm by low-damage dry etching. Very strong gain modulation has been achieved by etching through the active layers. The optically pumped laser structures show single-mode operation at 77 K
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; optical modulation; optical pumping; quantum well lasers; sputter etching; 70 nm; 77 K; GaInAs-GaAs; GaInAs/GaAs quantum wire laser; active layers; dry etching; gain coupling; gain modulation; optical pumping; reactive ion etching; single-mode operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950343
