DocumentCode
759043
Title
Stable CW operation of 1.3 μm double-heterostructure laser heteroepitaxially grown on Si
Author
Yamada, T. ; Tachikawa, M. ; Sasaki, T. ; Mori, H. ; Kadota, Y. ; Yamamoto, M.
Author_Institution
NTT Opto-Electron. Labs., Kanagawa, Japan
Volume
31
Issue
6
fYear
1995
fDate
3/16/1995 12:00:00 AM
Firstpage
455
Lastpage
457
Abstract
Stable CW operation for over 800 h at 25°C is demonstrated for the first time for a 1.3 μm InGaAsP DH LD heteroepitaxially grown on Si. This is attributable to the high performance of the LDs, approaching that of similar LDs grown on InP
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser stability; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 1.3 micrometre; 25 degC; 800 h; CW operation; III-V semiconductors; InGaAsP-Si; Si; double-heterostructure laser; heteroepitaxial growth; laser diodes; stable laser operation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950305
Filename
375889
Link To Document