DocumentCode :
759257
Title :
Enhancement of InGaN–GaN Indium–Tin–Oxide Flip-Chip Light-Emitting Diodes With TiO 
–SiO Multilayer Stack Omnidirectional Reflector
–SiO Multilayer Stack Omnidirectional ReflectorAuthor :
Lin, C.H. ; Lai, C.F. ; Ko, T.S. ; Huang, H.W. ; Kuo, H.C. ; Hung, Y.Y. ; Leung, K.M. ; Yu, C.C. ; Tsai, R.J. ; Lee, C.K. ; Lu, T.C. ; Wang, S.C.
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu
Volume :
18
Issue :
19
fYear :
2006
Firstpage :
2050
Lastpage :
2052
Abstract :
Enhancement of light extraction of GaN-based flip-chip indium-tin-oxide light-emitting diodes (FC ITO LEDs) with an omnidirectional reflector (ODR) is presented. The ODR consisting of alternating layers of TiO2 and SiO2 is designed to possess a complete photonic bandgap within the blue region of interest, and it is fabricated by E-beam deposition. At a driving current of 300mA and a chip size of 1 mmtimes1 mm, the light output power of the FC ITO LEDs with the ODR reaches 156 mW. This is an enhancement of 31% when compared with the same device with an Al mirror instead. Furthermore, by examining the radiation patterns, the FC ITO LED with the ODR shows stronger enhancement around the vertical direction. Our work offers promising potential for enhancing output powers of commercial light-emitting devices
Keywords :
electron beam deposition; flip-chip devices; gallium compounds; indium compounds; light emitting diodes; optical fabrication; optical multilayers; photonic band gap; wide band gap semiconductors; In2-xSnxO3-y; InGaN-GaN; InGaN-GaN indium-tin-oxide flip-chip light-emitting diodes; TiO2-SiO2; TiO2-SiO2 multilayer stack; e-beam deposition; omnidirectional reflector; photonic bandgap; Distributed Bragg reflectors; Indium tin oxide; Light emitting diodes; Mirrors; Nonhomogeneous media; Optical polarization; Photonic band gap; Photonic crystals; Power generation; Reflectivity; Flip-chip (FC); GaN; indium–tin–oxide (ITO); light-emitting diodes (LEDs); omnidirectional reflector (ODR); one-dimensional photonic crystal (1-D PhC);
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2006.883330
Filename :
1703632
Link To Document :
