Carrier loss in InGaAsP-InP lasers grown by hydride CVD

Author

Ketelsen, L.J.P. ; Kazarinov, R.F.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

Volume

31

Issue

5

fYear

1995

fDate

5/1/1995 12:00:00 AM

Firstpage

811

Lastpage

813

Abstract

We have experimentally characterized the quantum efficiency in InGaAsP hydride CVD grown lasers operating at 1.3 μm. The observed reduction in external quantum efficiency with increasing temperature is found to be caused mostly by a reduction of the internal quantum efficiency. The experimental results are well explained with a theoretical model based on thermionic emission of carriers out of the active region. The model also helps to understand the difference in temperature performance between lasers studied in this paper and those grown by MOCVD

Keywords

III-V semiconductors; chemical vapour deposition; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor growth; thermionic electron emission; 1.3 mum; InGaAsP-InP; InGaAsP-InP lasers; MOCVD; active region; carrier loss; external quantum efficiency; hydride CVD; increasing temperature; internal quantum efficiency; quantum efficiency; temperature performance; thermionic emission; Current measurement; Laser modes; Laser theory; Loss measurement; MOCVD; Optical losses; Quantum well lasers; Temperature; Threshold current; Zinc;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.375926

Filename

375926