Title :
A 3.1–10.6 GHz Ultra-Wideband Low Noise Amplifier With 13-dB Gain, 3.4-dB Noise Figure, and Consumes Only 12.9 mW of DC Power
Author :
Fang, Chao ; Law, Choi L. ; Hwang, James
Author_Institution :
PWTC Center, Nanyang Technol. Univ., Singapore
fDate :
4/1/2007 12:00:00 AM
Abstract :
A 3.1-10.6 GHz ultra-wideband two-stage pseudomorphit high electron mobility transistor low noise amplifier is presented. The first stage of the amplifier employs a resistive shunt feedback topology and two T-network sections to provide wideband input matching to a 50-Omega antenna. The current-sharing dc bias topology is used to ensure the low power consumption under fixed 3-V battery operation. The amplifier exhibits state of the art performance consuming only 12.9mW of dc power with a power gain of 12.5dB, plusmn0.5dB gain flatness, and 3.4-4.0dB noise figure. Input match is better than -12.0dB, output match is better than -15dB, and group delay is 184pSplusmn28pS
Keywords :
DC power transmission; high electron mobility transistors; low noise amplifiers; ultra wideband antennas; 12.9 mW; 13 dB; 3.1 to 10.6 GHz; 3.4 dB; DC power; T-network sections; current-sharing dc bias topology; noise figure; pHEMT; pseudomorphic high electron mobility transistor; resistive shunt feedback topology; ultra wideband low noise amplifier; wideband input matching; Broadband amplifiers; Broadband antennas; HEMTs; Impedance matching; Low-noise amplifiers; MODFETs; Noise figure; Performance gain; Topology; Ultra wideband technology; Current sharing; feedback; low noise amplifier (LNA); pseudomorphic high electron mobility transistor (pHEMT); ultra-wideband (UWB);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2007.892984
