Title :
A physically-based C∞-continuous fully-depleted SOI MOSFET model for analog applications
Author :
Iníguez, Benjamín ; Ferreira, L.F. ; Gentinne, Bernard ; Flandre, Denis
Author_Institution :
Dept. of Phys., Balearic Islands Univ., Palma de Mallorca, Spain
fDate :
4/1/1996 12:00:00 AM
Abstract :
An explicit physically-based fully-depleted SOI MOSFET model for all regions of operation is presented. Under quasistatic operation conditions analytical and C∞-continuous equations are derived for all transistor large and small-signal parameters. Short-channel effects have been included. The calculated characteristics show good agreement with measurements and smooth transitions between regions of operation
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; C∞-continuous equations; SOI MOSFET; analog applications; large-signal parameters; physically-based fully-depleted model; quasistatic operation conditions; short-channel effects; small-signal parameters; Analog circuits; CMOS technology; Capacitance; Circuit simulation; Equations; Frequency; Helium; MOSFET circuits; Power MOSFET; Switching circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
