DocumentCode :
759661
Title :
Reliable InGaAs quantum well lasers at 1.1 mu m
Author :
Waters, R.G. ; York, P.K. ; Beernink, K.J. ; Coleman, J.J.
Volume :
27
Issue :
7
fYear :
1991
fDate :
3/28/1991 12:00:00 AM
Firstpage :
552
Lastpage :
554
Abstract :
Strained-layer InGaAs quantum well lasers operating CW at 1.1 mu m have been life tested to over 18000 h, exhibiting a degradation rate of <.8% per kh. These uncoated lasers were life tested at 70 mW (per facet) in constant-power mode at a heatsink temperature of 30 degrees C. The laser structure, grown by metalorganic chemical vapour deposition, incorporates a step-graded quantum well heterostructure with a 30 AA In0.45Ga0.55As quantum well.
Keywords :
III-V semiconductors; chemical vapour deposition; gallium arsenide; indium compounds; life testing; semiconductor junction lasers; semiconductor quantum wells; 1.1 micron; 18000 h; 20 A; 30 C; 70 mW; CW operation; In 0.45Ga 0.55As quantum well; InGaAs quantum well lasers; constant-power mode; degradation rate; heatsink temperature; laser structure; life tested; metalorganic chemical vapour deposition; semiconductors; step-graded quantum well heterostructure; strained layer lasers; uncoated lasers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19910348
Filename :
100830
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=759661
بازگشت