Title :
Excimer-laser crystallized poly-Si TFT´s with transparent gate
Author :
Kim, Chang-Dong ; Matsumura, Masakiyo
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
fDate :
4/1/1996 12:00:00 AM
Abstract :
A new poly-crystal silicon thin-film transistor (poly-Si TFT) with a transparent bottom-gate electrode has been fabricated by XeF excimer-laser light irradiation from the glass substrate side. Compared with poly-Si TFTs made by XeF or ArF excimer-laser light irradiation to the top Si surface, the new TFT shows a higher electron mobility of about 100 cm2/Vs, independent of the Si film thickness. Therefore, poly-Si driver TFTs and amorphous-silicon (a-Si) TFTs for the matrix can be formed with the same channel-etch type bottom-gate structure simultaneously on the same glass substrate by using the same starting materials. This is expected to open the way for making driver monolithic and active matrix liquid crystal displays
Keywords :
electron mobility; elemental semiconductors; laser beam annealing; liquid crystal displays; recrystallisation annealing; semiconductor technology; silicon; thin film transistors; ITO; InSnO; Si; Si film thickness independence; XeF; XeF excimer-laser light irradiation; channel-etch type bottom-gate structure; driver TFT; driver monolithic active matrix liquid crystal displays; electron mobility; glass substrate side; poly-Si TFT; poly-crystal silicon thin-film transistor; transparent bottom-gate electrode; Active matrix liquid crystal displays; Crystalline materials; Crystallization; Electrodes; Electron mobility; Glass; Semiconductor films; Silicon; Substrates; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
