Excimer-laser crystallized poly-Si TFT´s with transparent gate

Author

Kim, Chang-Dong ; Matsumura, Masakiyo

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan

Volume

43

Issue

4

fYear

1996

fDate

4/1/1996 12:00:00 AM

Firstpage

576

Lastpage

579

Abstract

A new poly-crystal silicon thin-film transistor (poly-Si TFT) with a transparent bottom-gate electrode has been fabricated by XeF excimer-laser light irradiation from the glass substrate side. Compared with poly-Si TFTs made by XeF or ArF excimer-laser light irradiation to the top Si surface, the new TFT shows a higher electron mobility of about 100 cm²/Vs, independent of the Si film thickness. Therefore, poly-Si driver TFTs and amorphous-silicon (a-Si) TFTs for the matrix can be formed with the same channel-etch type bottom-gate structure simultaneously on the same glass substrate by using the same starting materials. This is expected to open the way for making driver monolithic and active matrix liquid crystal displays

Keywords

electron mobility; elemental semiconductors; laser beam annealing; liquid crystal displays; recrystallisation annealing; semiconductor technology; silicon; thin film transistors; ITO; InSnO; Si; Si film thickness independence; XeF; XeF excimer-laser light irradiation; channel-etch type bottom-gate structure; driver TFT; driver monolithic active matrix liquid crystal displays; electron mobility; glass substrate side; poly-Si TFT; poly-crystal silicon thin-film transistor; transparent bottom-gate electrode; Active matrix liquid crystal displays; Crystalline materials; Crystallization; Electrodes; Electron mobility; Glass; Semiconductor films; Silicon; Substrates; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.485540

Filename

485540