Title :
A new accurate yield prediction method for system-LSI embedded memories
Author :
Shimada, Yutaka ; Sakurai, Koichi
Author_Institution :
Renesas Technol. Corp., Hyogo, Japan
Abstract :
The authors propose a new accurate yield prediction method for system-LSI embedded memories to improve the productivity of chips. Their new method is based on the failure-related yield prediction method in which failure bits in memory are tested to see whether they are repairable or not by using built-in redundancies. The important concept of the new method is called "repairable matrix\´\´ (RM). In RM, rmij=1 means that i row redundancy sets and j column redundancy sets are needed for repair, where rmij is an element of the matrix. Here, RM can indicate all the candidate combinations of the number of row and column redundancy sets for repair. The new yield prediction method using RM solves two problems, "asymmetric repair\´\´ and "link set.\´\´ These have a significant effect on accurate yield prediction but have not yet been approached by conventional analytical methods. The calculation of yield by the new method is demonstrated in two kinds of advanced memory devices that have different design rules, failure situations, and redundancy designs. The calculated results are consistent with the actual yield. On average, the difference in accuracy between the new method and conventional analytical methods is about 5%.
Keywords :
VLSI; failure analysis; integrated circuit reliability; integrated circuit yield; integrated memory circuits; matrix algebra; redundancy; accurate yield prediction method; asymmetric repair; built-in redundancies; column redundancy sets; failure-related yield prediction method; link set; repairable matrix; row redundancy sets; semiconductor IC manufacturing; system-LSI embedded memories; Failure analysis; Large scale integration; Manufacturing; Multimedia systems; Prediction methods; Production; Productivity; Semiconductor device manufacture; Testing;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
DOI :
10.1109/TSM.2003.815636