Title :
Comparison of gate-induced drain leakage and charge pumping measurements for determining lateral interface trap profiles in electrically stressed MOSFETs
Author :
Okhonin, Serguei ; Hessler, Thierry ; Dutoit, Michel
Author_Institution :
Inst. for Micro- and Optoelectron., Swiss Federal Inst. of Technol., Lausanne, Switzerland
fDate :
4/1/1996 12:00:00 AM
Abstract :
Improved methods for extracting lateral spatial profiles of interface traps in electrically stressed MOSFETs from gate-induced drain leakage and charge pumping measurements are proposed. Simplified theoretical models are developed. The formal similarity of the two methods is shown. The results obtained on submicron MOSFET after uniform (Fowler-Nordheim) and nonuniform (hot carrier) stress are compared and found to be in good agreement. The relative merits of these techniques are discussed
Keywords :
MOSFET; hot carriers; interface states; leakage currents; semiconductor device models; Fowler-Nordheim stress; charge pumping measurements; electrically stressed MOSFET; gate-induced drain leakage; hot carrier stress; lateral interface trap profiles; submicron MOSFET; theoretical models; Aging; Charge measurement; Charge pumps; Current measurement; Electric variables measurement; Hot carriers; MOSFET circuits; MOSFETs; Spontaneous emission; Stress measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
