Comparison of gate-induced drain leakage and charge pumping measurements for determining lateral interface trap profiles in electrically stressed MOSFETs

Author

Okhonin, Serguei ; Hessler, Thierry ; Dutoit, Michel

Author_Institution

Inst. for Micro- and Optoelectron., Swiss Federal Inst. of Technol., Lausanne, Switzerland

Volume

43

Issue

4

fYear

1996

fDate

4/1/1996 12:00:00 AM

Firstpage

605

Lastpage

612

Abstract

Improved methods for extracting lateral spatial profiles of interface traps in electrically stressed MOSFETs from gate-induced drain leakage and charge pumping measurements are proposed. Simplified theoretical models are developed. The formal similarity of the two methods is shown. The results obtained on submicron MOSFET after uniform (Fowler-Nordheim) and nonuniform (hot carrier) stress are compared and found to be in good agreement. The relative merits of these techniques are discussed

Keywords

MOSFET; hot carriers; interface states; leakage currents; semiconductor device models; Fowler-Nordheim stress; charge pumping measurements; electrically stressed MOSFET; gate-induced drain leakage; hot carrier stress; lateral interface trap profiles; submicron MOSFET; theoretical models; Aging; Charge measurement; Charge pumps; Current measurement; Electric variables measurement; Hot carriers; MOSFET circuits; MOSFETs; Spontaneous emission; Stress measurement; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.485543

Filename

485543