A High-Voltage Low-Standby-Power Startup Circuit Using Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs

Author

Qimeng Jiang ; Zhikai Tang ; Cheng Liu ; Yunyou Lu ; Chen, Kevin J.

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China

Volume

61

Issue

3

fYear

2014

fDate

Mar-14

Firstpage

762

Lastpage

768

Abstract

We experimentally demonstrate a high-voltage low-standby power startup circuit for powering up the off-line switched-mode power supply (SMPS) during the startup period by exploiting monolithically integrated enhancement/depletion-mode metal-insulator-semiconductor high electron mobility transistors (E/D-mode MIS-HEMTs) fabricated on a GaN-on-Si power device platform. The E/D-mode MIS-HEMTs exhibit a threshold voltage of +1.2 and -11 V, respectively. The high-voltage D-mode device used in the demonstration features an OFF-state breakdown voltage of 640 V and a safe operating area with a thermal limitation of 11.6 W/mm, whereas the low-voltage E-mode device features a source-gate breakdown voltage of 98 V, satisfying the requirement of the startup circuit. The functionality of the startup circuit is successfully achieved with an input voltage range 10-200 V and a startup current of 1.08 mA.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; low-power electronics; silicon; switched mode power supplies; wide band gap semiconductors; AlGaN-GaN; GaN-on-Si power device platform; SMPS; enhancement-depletion-mode; high-voltage D-mode device; high-voltage low-standby-power startup circuit; metal-insulator-semiconductor high electron mobility transistors; monolithically integrated E-D-mode MIS-HEMT; offline switched-mode power supply; voltage -11 V; voltage 1.2 V; voltage 10 V to 200 V; voltage 640 V; Aluminum gallium nitride; Electric breakdown; Gallium nitride; Logic gates; Switched-mode power supply; Threshold voltage; Voltage measurement; Enhancement/depletion-mode metal–insulator–semiconductor high electron mobility transistors (E/D-mode MIS-HEMTs); fluorine plasma ion implantation; high-voltage startup circuit; switched-mode power supply (SMPS);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2298459

Filename

6722951