DocumentCode :
759803
Title :
Direct Digital Synthesizer With Sine-Weighted DAC at 32-GHz Clock Frequency in InP DHBT Technology
Author :
Turner, Steven Eugene ; Kotecki, David E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Maine Univ., Orono, ME
Volume :
41
Issue :
10
fYear :
2006
Firstpage :
2284
Lastpage :
2290
Abstract :
A direct digital synthesizer (DDS) implemented in InP double heterojunction bipolar transistor (DHBT) technology is reported. This DDS uses a sine-weighted digital to analog converter (DAC) architecture that eliminates the need for a ROM. This enables operation at high frequencies with lower power consumption compared to traditional approaches. The phase accumulator is 8-bits wide and the sine-weighted DAC uses the five most significant bits (MSBs) for phase to amplitude conversion. The DDS operates up to a 32-GHz clock frequency for all frequency control words (FCWs) and can synthesize sine-wave outputs from 125 MHz to 16GHz in 125-MHz steps. The spurious free dynamic range (SFDR) is measured over the Nyquist bandwidth to be 31.00 dBc for the fundamental output frequency of 125 MHz. Over the full range of FCWs, the worst case SFDR is 21.56 dBc at an FCW of 95, and the average SFDR is 26.95 dBc. The circuit is implemented with 1891 transistors and consumes 9.45 W of power
Keywords :
III-V semiconductors; bipolar MIMIC; bipolar integrated circuits; digital-analogue conversion; direct digital synthesis; heterojunction bipolar transistors; indium compounds; low-power electronics; 125 to 16E3 MHz; 32 GHz; 8 bit; 9.45 W; DHBT technology; InP; all frequency control words; digital-to-analog converter; direct digital synthesizer; emitter coupled logic; phase accumulator; sine-weighted DAC; spurious free dynamic range; Clocks; DH-HEMTs; Digital-analog conversion; Double heterojunction bipolar transistors; Dynamic range; Energy consumption; Frequency control; Frequency synthesizers; Indium phosphide; Read only memory; Accumulator; digital to analog converter (DAC); direct digital synthesizer (DDS); emitter coupled logic (ECL); heterojunction bipolar transistor (HBT); high-speed integrated circuits; indium phosphide (InP);
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2006.881552
Filename :
1703683
Link To Document :
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