Title :
Temperature Analysis of Threshold Current in Infrared Vertical-Cavity Surface-Emitting Lasers
Author :
Chen, Chen ; Leisher, Paul O. ; Allerman, Andrew A. ; Geib, Kent M. ; Choquette, Kent D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL
Abstract :
The temperature dependence of threshold current Ith in vertical-cavity surface-emitting lasers (VCSELs) can be approximated by the equation Ith(T)=alpha+beta(T-Tmin)2 , where Tmin is the temperature of lowest Ith,alpha and beta are parameters, and temperature is T. We compare the temperature dependence of threshold current in VCSELs with GaAs, InGaAs, and strain compensated InGaAs-GaAsP quantum wells. From our analysis we find the coefficient beta is related to the gain properties of the quantum well, and is shown to serve as a benchmark for the VCSEL temperature sensitivity. The incorporation of strain-compensated high-barrier GaAsP layers in the active region of 980-nm VCSELs is demonstrated to reduce the threshold dependence on temperature
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared sources; quantum well lasers; surface emitting lasers; thermal analysis; 980 nm; GaAs; InGaAs; InGaAs-GaAsP; InGaAs-GaAsP quantum wells; VCSEL; infrared vertical-cavity surface-emitting lasers; strain compensation; temperature dependence; threshold current; Capacitive sensors; Equations; Indium gallium arsenide; Laser modes; Quantum well lasers; Surface emitting lasers; Temperature dependence; Temperature sensors; Threshold current; Vertical cavity surface emitting lasers; Diode lasers; temperature analysis; threshold current; vertical-cavity surface-emitting lasers (VCSELs);
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2006.881828
