Title :
Correction to “Quantitative Analysis of the Effect of Hydrogen Diffusion From Silicon Oxide Etch-Stopper Layer Into Amorphous In–Ga–Zn–O on Thin-Film Transistor” [Nov 14 3762-3767]
Author :
Toda, Takechi ; Wang, Dongping ; Jiang, Jianliang ; Hung, Mai Phi ; Furuta, Mamoru
Abstract :
In the above paper [1], co-author D. Wang’s name was incorrectly spelled in both the biography and the byline. The correct spelling is Dapeng Wang.
Keywords :
Annealing; Charge carrier density; Hydrogen; Silicon; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2374978
