DocumentCode :
760092
Title :
The influence of polarization on hole transport in plasma-polymerized organosilicon films
Author :
Sielski, Jan ; Kryszewski, Marian
Author_Institution :
Center of Molecular & Macromolecular Studies, Polish Acad. of Sci., Lodz, Poland
Volume :
27
Issue :
4
fYear :
1992
fDate :
8/1/1992 12:00:00 AM
Firstpage :
687
Lastpage :
690
Abstract :
The influence of polarization procedure on charge carrier transport in plasma polymerized organosilicon films was investigated. Mobility of holes was determined using the time-of-flight method. It was found that frozen-in polarization of the plasma polymerized hexamethyldisilazane films increases the value of drift mobility. This process is fully reversible and after depolarization the value of drift mobility returns to the one before polarization
Keywords :
carrier mobility; dielectric depolarisation; dielectric polarisation; polymer films; thermally stimulated currents; depolarization; drift mobility; frozen-in polarization; hexamethyldisilazane films; hole mobility; hole transport; polarization procedure; time-of-flight method; Charge carriers; Circuits; Plasma density; Plasma measurements; Plasma temperature; Plasma transport processes; Polarization; Polymer films; Pulse measurements; Temperature measurement;
fLanguage :
English
Journal_Title :
Electrical Insulation, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9367
Type :
jour
DOI :
10.1109/14.155783
Filename :
155783
Link To Document :
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