• DocumentCode
    760283
  • Title

    Independently addressable InGaAs/GaAs vertical-cavity surface-emitting laser arrays

  • Author

    Lehmen, A. Von ; Chang-Hasnain, C. ; Wullert, J. ; Carrion, L. ; Stoffel, N. ; Florez, L. ; Harbison, J.

  • Author_Institution
    Bellcore, Red Bank, NJ, USA
  • Volume
    27
  • Issue
    7
  • fYear
    1991
  • fDate
    3/28/1991 12:00:00 AM
  • Firstpage
    583
  • Lastpage
    585
  • Abstract
    The fabrication of an 8*8 independently addressable InGaAs/GaAs vertical-cavity surface-emitting laser array based on planar ion-implantation processes is described. The uniformity of laser characteristics across the array under both pulsed and CW operation is discussed. Simultaneous addressing of multiple lasers is demonstrated.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; ion implantation; semiconductor doping; semiconductor laser arrays; CW operation; InGaAs-GaAs; independently addressable laser arrays; laser characteristics; multiple lasers; planar ion-implantation processes; pulsed operation; simultaneous addressing; vertical-cavity surface-emitting laser array;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910368
  • Filename
    100850