Title :
Small dimension Bragg reflectors formed by air-isolated GaAs layers
Author :
Hummel, S. ; Frateschi, Newton ; Dapkus, P.D.
fDate :
3/28/1991 12:00:00 AM
Abstract :
Demonstrates a process for the fabrication of air-isolated microstructures based upon impurity diffusion disordering and selective etching of multilayer structures. The process is illustrated by the fabrication of 5 and 22 mu m wide Bragg reflectors with reflectivities in excess of 95%.
Keywords :
III-V semiconductors; diffusion in solids; distributed Bragg reflector lasers; etching; gallium arsenide; semiconductor junction lasers; 22 micron; 5 micron; Bragg reflectors; air-isolated microstructures; impurity diffusion disordering; multilayer structures; reflectivities; selective etching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910371
