DocumentCode :
760517
Title :
Diodes
Author :
Thurston, Marlin O.
Author_Institution :
Dept. of Elec. Engrg., The Ohio State University, Columbus, Ohio
Volume :
3
Issue :
4
fYear :
1960
Firstpage :
128
Lastpage :
133
Abstract :
Semiconductor diodes have achieved great prominence in the electronic industry because of their outstanding performance and great versatility. They are consequently of increasing importance in the education of electrical engineers. Since new diodes are being continually developed, it is essential that the educational emphasis be placed on underlying principles rather than on the devices themselves. In this paper a brief descriptive outline is presented of some of the p-n junction phenomena that are important in understanding diode performance. Among these phenomena are nonlinear resistance, conductivity modulation, avalanche breakdown, carrier storage, junction capacitance, and carrier tunneling. As illustrations of these effects, the characteristics of several types of diodes are discussed.
Keywords :
Avalanche breakdown; Breakdown voltage; Conductivity; Electric resistance; P-n junctions; Rectifiers; Semiconductor diodes; Silicon;
fLanguage :
English
Journal_Title :
Education, IRE Transactions on
Publisher :
ieee
ISSN :
0893-7141
Type :
jour
DOI :
10.1109/TE.1960.4322153
Filename :
4322153
Link To Document :
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