Novel and accurate compact DC model of GaAs MESFET for large-signal computer calculations

A novel MESFET model in a form suitable for implementation in nonlinear circuit simulators is presented. The proposed model not only covers the entire areas of the DC curves of the device, but its modelling parameters can also be extracted easily with no need for optimisation codes. Results show that the proposed model solves the severe problem of fitting the device in the depth of the pinch-off region (the general problem of all the published models with no exception, even for the most popular used by Curtice). Typical CPU times for evaluating the modelling parameters for the commercial chip NEC71000 device using this model and Curtice´s are in the range of 1:25.