A new technique to determine the average low-field electron mobility in MESFET using C-V measurement

Author

Moon, Byung-Jong ; Helix, Max J. ; Lee, Seongheam

Author_Institution

Vitesse Semicond. Corp., Camarillo, CA, USA

Volume

39

Issue

9

fYear

1992

fDate

9/1/1992 12:00:00 AM

Firstpage

1982

Lastpage

1986

Abstract

A method to determine the average low-field mobility using the number of electrons available for the conduction based on C-V measurement is proposed. This technique requires neither information of the doping profile in the channel, nor the exact value of the threshold voltage. For a D-mode MESFET, the average electron mobility magnitude is compared with that of the C. Chen and D.K. Arch (1989) method. The technique to determine the average electron mobility in the channel described is much simpler. Based on C- V measurement, good agreement is obtained between experimental data and simulation calculation for the electron density in the channel. Using the proposed method, the dependence of average electron mobility on the gate voltage is also proposed. Using the proposed method for determining the average electron mobility, the effect of a p-buried layer on the mobility was investigated, and is in good agreement with the physical phenomena

Keywords

Schottky gate field effect transistors; carrier mobility; semiconductor device testing; C-V measurement; D-mode; MESFET; average electron mobility; channel electron density; gate voltage; low-field electron mobility; p-buried layer; simulation calculation; Capacitance-voltage characteristics; Circuit simulation; Density measurement; Doping profiles; Electron mobility; MESFET circuits; Moon; Threshold voltage; Transconductance; Very large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.155868

Filename

155868