DocumentCode
760839
Title
Heterojunction bipolar transistor design for power applications
Author
Gao, Guang-bo ; Morkoc, Hadis ; Chang, Mau-Chung Frank
Author_Institution
Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
Volume
39
Issue
9
fYear
1992
fDate
9/1/1992 12:00:00 AM
Firstpage
1987
Lastpage
1997
Abstract
Design rules of AlGaAs-GaAs heterojunction bipolar transistors for power applications are presented and compared to those for Si microwave power transistors. Concepts discussed include the tradeoff between power gain, output power, power-added efficiency in the layout design, layer structure selection, and thermal design
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; power transistors; AlGaAs-GaAs; HBT; design rules; heterojunction bipolar transistors; layer structure selection; layout design; output power; power applications; power gain; power-added efficiency; thermal design; Frequency; Gallium arsenide; Hafnium; Heterojunction bipolar transistors; Microwave amplifiers; Microwave transistors; Power amplifiers; Power generation; Pulse amplifiers; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.155869
Filename
155869
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