Title :
Tunable Semiconductor Double-Chirped Mirror With High Negative Dispersion
Author :
Jasik, Agata ; Wasylczyk, Piotr ; Wnuk, Pawel ; Dems, M. ; Wojcik-Jedlinska, Anna ; Reginski, Kazimierz ; Zinkiewicz, Lukasz ; Hejduk, Krzysztof
Author_Institution :
Inst. of Electron Technol., Warsaw, Poland
Abstract :
We have developed a tunable semiconductor double-chirped mirror with high negative dispersion grown by molecular beam epitaxy. The simplified numerical plane-wave reflection transfer method was applied to design the dispersive mirror structure. The multilayer stack was grown of AlAs/GaAs materials and capped by an SiNx antireflective layer. The group delay dispersion as well as reflectivity characteristic were continuously tunable across the mirror surface from 1080 to 1000 nm. Within this range, the negative value of the dispersion changed from -3850±100 fs2 over the 6 nm band around 1080 nm to -2200±100 fs2 over 13 nm around 1000 nm with the reflectivity from the range of 99.0÷99.2%. The mirror performance was tested in a diode-pumped femtosecond Yb:KYW oscillator.
Keywords :
III-V semiconductors; aluminium compounds; antireflection coatings; gallium arsenide; mirrors; molecular beam epitaxial growth; optical dispersion; optical fabrication; reflectivity; silicon compounds; AlAs-GaAs-SiNx; antireflective layer; diode-pumped femtosecond oscillator; dispersive mirror structure; group delay dispersion; high negative dispersion; molecular beam epitaxy; numerical plane-wave reflection transfer method; reflectivity; tunable semiconductor double-chirped mirror; wavelength 1080 nm to 1000 nm; Dispersion; Laser mode locking; Laser tuning; Mirrors; Reflectivity; Wavelength measurement; III-V semiconductor materials; Semiconductor epitaxial layers; chirp; dielectric films; dispersion; laser stability; laser tuning; mirrors; solid lasers; surface roughness; thickness measurement;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2013.2288457
