DocumentCode :
76086
Title :
Composition-Graded AlInP/AlGaAsSb/InP Type-II DHBTs With 
Author :
Xu, Huiming ; Iverson, Eric W. ; Liao, Chi-Chih ; Cheng, K.Y. ; Feng, Milton
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
Volume :
34
Issue :
1
fYear :
2013
fDate :
Jan. 2013
Firstpage :
33
Lastpage :
35
Abstract :
A type-II AlInP/AlGaAsSb/InP double heterojunction bipolar transistor (DHBT) with composition-graded Al content in the base is designed and grown by molecular beam epitaxy. Compared with composition-graded GaAsSb and InGaAsSb bases in DHBT, the graded AlGaAsSb base can generate a larger built-in electric field, thus reducing base transit time and improving device speed. We have fabricated AlGaAsSb graded base DHBTs and demonstrated fT/fMAX = 450/510 GHz for a 0.3 × 2 μm2 device.
Keywords :
aluminium compounds; electric fields; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; AlInP-AlGaAsSb-InP; base transit time reduction; built-in electric field; composition-graded type-II DHBT; device speed improvement; double heterojunction bipolar transistor; frequency 450 GHz; frequency 510 GHz; molecular beam epitaxy; Current measurement; Double heterojunction bipolar transistors; Indium phosphide; Integrated circuits; Metals; Performance evaluation; AlGaAsSb; InP; double heterojunction bipolar transistor (DHBT); millimeter wave;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2224090
Filename :
6361454
Link To Document :
