Title :
Experimental investigation of the temperature dependence of GaAs FET equivalent circuits
Author :
Anholt, Robert E. ; SWIRHUN, Stanley E.
Author_Institution :
Gateway Modeling, Minneapolis, MN, USA
fDate :
9/1/1992 12:00:00 AM
Abstract :
Accurate 13-element temperature-dependent RF equivalent circuits have been extracted from on-wafer S-parameter measurements of ion implanted and epitaxially grown recess-gate MESFETs and HEMTs at many biases for temperatures from -70 to +110°C. The variations in each equivalent circuit element are expressed by a linear function of temperature. The temperature coefficients are bias- and technology-dependent. These data can be used to predict RF circuit performance variations with temperature. It is used to deduce the temperature dependence of physical factors such as electron mobilities and saturated velocities and the Schottky-barrier height
Keywords :
III-V semiconductors; S-parameters; Schottky gate field effect transistors; equivalent circuits; field effect transistors; gallium arsenide; high electron mobility transistors; semiconductor device models; -70 to 110 degC; FET equivalent circuits; GaAs; HEMTs; MESFETs; RF equivalent circuits; Schottky-barrier height; electron mobilities; epitaxially grown; ion implanted; on-wafer S-parameter measurements; recess-gate; saturated velocities; temperature coefficients; temperature dependence; Circuit optimization; Data mining; Equivalent circuits; Gallium arsenide; HEMTs; MESFETs; MODFETs; Radio frequency; Scattering parameters; Temperature dependence;
Journal_Title :
Electron Devices, IEEE Transactions on
