DC characterization of fully ion-implanted p-n junctions into semi-insulating InP

The forward and reverse characteristics of p⁺-n junctions made by Mg and Si implantation and rapid thermal annealing into Fe-doped semi-insulating InP are described. The effects of the Si dose for obtaining the n-type region, the use of P co-implantation for obtaining the p⁺ region, and the annealing time are studied. The dominant conduction mechanism at forward bias was found to be recombination in the space-charge region, with ideality factors of n=2 down to 198 K, and temperature dependence with an activation energy of 0.76 eV. The reverse characteristics presented junction breakdown at voltages around -20 V, and were accurately described by a thermally-activated trap-assisted tunneling mechanism. The energy of the corresponding trap, obtained by the fitting of the experimental characteristics, was 0.6 eV, and its origin was tentatively ascribed to the Fe deep acceptor present in semi-insulating InP