Title :
An improved model of ion-implanted GaAs OPFET
Author :
Chakrabarti, P. ; Shrestha, N.L. ; Srivastava, S. ; Khemka, V.
Author_Institution :
Dept. of Electron. & Commun. Eng., Birla Inst. of Technol., Ranchi, India
fDate :
9/1/1992 12:00:00 AM
Abstract :
A seminumerical model of an ion-implanted GaAs optical-field-effect-transistor (OPFET) is presented. The objective of the present work is to overcome the limitations of the existing model without changing the basic approach. Analytical expressions obtained using the one-dimensional Poisson´s equation have been solved numerically to obtain the I-V characteristics of the device in dark and illuminated conditions. It is seen that the saturation drain current of the device changes significantly in the illuminated condition. The existing model of the device has been improved by considering the effects of the photovoltage generated across the metal-semiconductor junction and optical modulation of depletion edge depths in the illuminated condition. Unlike in the previous model, it has been concluded that for a high gate bias resistance the optical radiation controls the saturation drain current by changing the channel conductance rather than its conductivity
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; ion implantation; optical modulation; photovoltaic effects; semiconductor device models; semiconductor-metal boundaries; GaAs; I-V characteristics; MESFET; OPFET; channel conductance; dark conditions; depletion edge depths; high gate bias resistance; illuminated conditions; ion-implanted GaAs; metal-semiconductor junction; one-dimensional Poisson´s equation; optical modulation; optical-field-effect-transistor; photovoltage; saturation drain current; seminumerical model; Gallium arsenide; Lighting; MESFETs; Optical amplifiers; Optical control; Optical modulation; Optical saturation; Semiconductor optical amplifiers; Stimulated emission; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
