• DocumentCode
    761046
  • Title

    Analytical piezoelectric charge densities in GaAs MESFETs

  • Author

    Huang, Qing-An ; Tong, Qin-Yi

  • Author_Institution
    Microelectronics Center, Southeast Univ., Nanjing, China
  • Volume
    43
  • Issue
    3
  • fYear
    1996
  • fDate
    3/1/1996 12:00:00 AM
  • Firstpage
    509
  • Lastpage
    510
  • Abstract
    The orientation effect in GaAs MESFETs is related to the piezoelectric charge due to stress in overlayers. This brief describes an analytical method for the calculation of the piezoelectric charge in GaAs MESFETs on (100), (011), (1¯1¯1¯)Ga, and (111)As substrates
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; internal stresses; piezoelectricity; GaAs; MESFETs; orientation effect; overlayer stress; piezoelectric charge densities; Circuit simulation; Fabrication; Gallium arsenide; MESFETs; Numerical analysis; Petroleum; Piezoelectric effect; Tensile stress; Threshold voltage; Voltage control;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.485669
  • Filename
    485669
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=761046