Title :
Analytical piezoelectric charge densities in GaAs MESFETs
Author :
Huang, Qing-An ; Tong, Qin-Yi
Author_Institution :
Microelectronics Center, Southeast Univ., Nanjing, China
fDate :
3/1/1996 12:00:00 AM
Abstract :
The orientation effect in GaAs MESFETs is related to the piezoelectric charge due to stress in overlayers. This brief describes an analytical method for the calculation of the piezoelectric charge in GaAs MESFETs on (100), (011), (1¯1¯1¯)Ga, and (111)As substrates
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; internal stresses; piezoelectricity; GaAs; MESFETs; orientation effect; overlayer stress; piezoelectric charge densities; Circuit simulation; Fabrication; Gallium arsenide; MESFETs; Numerical analysis; Petroleum; Piezoelectric effect; Tensile stress; Threshold voltage; Voltage control;
Journal_Title :
Electron Devices, IEEE Transactions on
