Hot-electron-induced degradation and post-stress recovery of bipolar transistor gain and noise characteristics

Author

Sun, C. Jack ; Reinhard, D.K. ; Grotjohn, T.A. ; Huang, C.-J. ; Yu, C.-C.W.

Author_Institution

Dept. of Electr. Eng., Michigan State Univ., East Lansing, MI, USA

Volume

39

Issue

9

fYear

1992

fDate

9/1/1992 12:00:00 AM

Firstpage

2178

Lastpage

2180

Abstract

Hot-carrier-induced degradation and post-stress recovery of bipolar transistor gain and low-frequency noise are investigated. Forward-bias recovery allows a partial reversal of degradation, and is believed to be due primarily to a reduction of the number of electrons trapped in the oxide. Thermal annealing, which is capable of removing interface states as well, produces a larger recovery of both gain and noise performance measures

Keywords

annealing; bipolar transistors; electron device noise; electron traps; hot carriers; bipolar transistor gain; forward bias recovery; gain recovery; hot electron induced degradation; low-frequency noise; noise characteristics; noise performance recovery; partial reversal of degradation; post-stress recovery; thermal annealing; trapped electrons reduction; Annealing; Bipolar transistors; Electron traps; Gain measurement; Hot carriers; Interface states; Low-frequency noise; Noise measurement; Performance gain; Thermal degradation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.155892

Filename

155892