Title :
GexSi1-x/silicon inversion-base transistors: theory of operation
Author :
Taft, Robert C. ; Plummer, James D.
Author_Institution :
Motorola Inc., Austin, TX, USA
fDate :
9/1/1992 12:00:00 AM
Abstract :
A theoretical study of the device characteristics of the Gex Si1-x/silicon inversion-base transistor (BICFET) is presented. This transistor uses the space charge of holes in a modulation-doped inversion channel to control vertical electron transport. This study is of interest not only because of the unique interaction of transport mechanisms in the BICFET but also because the BICFET is very well suited to the GexSi1-x/Si system, and offers substantial performance advantages over the BJT. The device characteristics presented are based on a numerical and analytical analysis using the drift-diffusion formalism. The effects that quantum confinement and non-semi-classical transport have on this structure are presented. The authors conclude with a comparison between the Gex Si1-x/Si BICFET and GexSi1-x/Si HBT
Keywords :
Ge-Si alloys; bipolar transistors; field effect transistors; semiconductor device models; semiconductor materials; silicon; BICFET; GexSi1-x-Si; analytical analysis; device characteristics; drift-diffusion formalism; interaction of transport mechanisms; inversion-base transistors; modulation-doped inversion channel; numerical analysis; operation; performance; quantum confinement; semiconductors; space charge of holes; vertical electron transport; Bipolar transistors; FETs; Fabrication; MOSFETs; Research and development; Silicon devices; Space technology; Substrates; Tunneling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
