Title :
GexSi1-x/silicon inversion-base transistors: experimental demonstration
Author :
Taft, Robert C. ; Plummer, James D. ; Iyer, Subramanian S.
Author_Institution :
Motorola Inc., Austin, TX, USA
fDate :
9/1/1992 12:00:00 AM
Abstract :
The fabrication, material characterization, and electrical evaluation of the p-channel GexSi1-x/silicon inversion-base transistor (BICFET) are described. The BICFET was one of the first bipolar devices to take advantage of the breakthroughs in advanced GexSi1-x/Si processing technology, to which its p-channel implementation is ideally suited. At this time, the performance limitations of the GexSi1-x/Si BICFET are set only by the current fabrication technology, and not by limits imposed by its physical principles of operation. The electrical results presented include both the unipolar characteristics, in which the BICFET is configured as a heterojunction FET, and the bipolar characteristics, which is the intended high-performance mode of operation. The experimental results presented are in good agreement with theoretical study
Keywords :
Ge-Si alloys; bipolar transistors; field effect transistors; semiconductor materials; silicon; BICFET; GexSi1-x-Si; bipolar characteristics; electrical evaluation; experimental results; fabrication; fabrication technology; heterojunction FET; inversion-base transistors; material characterization; p-channel; performance limitations; semiconductors; unipolar characteristics; Doping; FETs; Fabrication; Heterojunctions; Molecular beam epitaxial growth; Morphology; Silicon; Tail; Temperature; Transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
