Title :
1/f noise reduction in self-aligned AlGaAs/GaAs HBT with AlGaAs surface passivation layer
Author :
Hayama, Nobuyuki ; Honjo, Kazuhiko
Author_Institution :
NEC Corp., Ibaraki, Japan
fDate :
9/1/1992 12:00:00 AM
Abstract :
It is demonstrated that drastic improvement is achieved in base current noise for AlGaAs-passivated full self-aligned AlGaAs/GaAs HBTs, due to extrinsic base recombination current reduction. The base current 1/f noise was over 17 dB lower than that for an non-AlGaAs-passivated HBT, and comparable to that for an AlInAs/InGaAs HBT under a low collector density
Keywords :
III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; heterojunction bipolar transistors; passivation; solid-state microwave devices; 1/f noise reduction; AlGaAs surface passivation layer; AlGaAs-GaAs; base current noise; extrinsic base recombination current reduction; low noise transistors; semiconductors; Circuit noise; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Low-frequency noise; Noise reduction; Passivation; Phase noise; Radiative recombination; Semiconductor device noise;
Journal_Title :
Electron Devices, IEEE Transactions on
