Title :
Influence of phase-breaking processes on shot noise in resonant tunneling devices
Author :
Alam, Muhammad A. ; Khondker, Abul N.
Author_Institution :
Dept. of Electr. & Comput. Eng., Clarkson Univ., Potsdam, NY, USA
fDate :
9/1/1992 12:00:00 AM
Abstract :
J. Han and F.S. Barnes (1991) have shown that shot noise power associated with the current in double-barrier resonant tunneling structures is significantly reduced due to reductions in velocity fluctuations. The model is based on the transit time of coherent electrons across the device structure. It is shown that in the presence of phase-breaking processes the shot noise cutoff frequency is higher than that predicted by Han and Barnes. This is because an increased phase-breaking collision rate tends to broaden the effective velocity distribution for the transmitted electrons
Keywords :
Monte Carlo methods; electron device noise; resonant tunnelling devices; semiconductor device models; double-barrier resonant tunneling structures; model; phase-breaking collision rate; phase-breaking processes; reductions in velocity fluctuations; resonant tunneling devices; shot noise; shot noise cutoff frequency; transit time of coherent electrons; transmitted electrons; velocity distribution broadening; Cutoff frequency; Electrons; Fluctuations; Interference; Noise reduction; Optical scattering; Particle scattering; Phase noise; Resonant tunneling devices; Space charge;
Journal_Title :
Electron Devices, IEEE Transactions on
