Title :
A simple physical model including velocity overshoot for n-channel heterostructure FETs
Author :
Fulkerson, David E.
Author_Institution :
Honeywell Syst. & Res. Center, Bloomington, MN, USA
fDate :
9/1/1992 12:00:00 AM
Abstract :
A one-dimensional DC model is constructed for n-channel heterostructure FETs. The model includes the velocity versus field relationships, carrier diffusion, and velocity overshoot. The model and experimental data imply that the drain current increases by about 27% by velocity overshoot when the gate length is 1 μm
Keywords :
field effect transistors; semiconductor device models; 1 micron; carrier diffusion; drain current; experimental data; gate length; model; n-channel HFET; n-channel heterostructure FETs; one-dimensional DC model; physical model; velocity overshoot; velocity versus field relationships; Acoustical engineering; Electrons; Equations; HEMTs; MODFETs; Optical noise; Phase noise; Resonance; Resonant tunneling devices; Semiconductor device noise;
Journal_Title :
Electron Devices, IEEE Transactions on
