Title :
38-GHz-band high-power MMIC amplifier module for satellites on board use
Author :
Shigaki, Masafumi ; Koike, Syoichi ; Nogatomo, Kazuo ; Kobayashi, Kazuhiko ; Takahashi, Hidenori ; Nakatani, Tetsuji ; Tanibe, Norio ; Suzuki, Yoshiaki
Author_Institution :
Fujitsu Ltd., Kawasaki, Japan
fDate :
6/1/1992 12:00:00 AM
Abstract :
The design and development results of 38-GHz high-power MMIC amplifier modules for use in the solid-state power amplifier (SSPA) to be carried aboard Engineering Test Satellite VI in 1993 are presented. This amplifier will be used in millimeter-wave intersatellite communication experiments. For the development of this amplifier, high-power, highly reliable FETs with 0.25-μm-long gates were designed. The FET large-signal impedance was accurately measured using an improved load-pull method and MMIC transformers. The measurements were used to design two types of MMICs: one composed of two FET cells with 600-μm-wide gates and the other of four FET cells with 400-μm-wide gates. A two-stage amplifier package consisting of two of these MMICs that can be used at 38 GHz is also developed. A P o(1 dB) of 25 dBm and a gain of 11 dB are obtained. A 38-GHz test conducted during chip screening achieves a high production yield without circuits adjustment
Keywords :
MMIC; power amplifiers; satellite links; space communication links; 0.25 micron; 11 dB; 38 GHz; 400 to 600 micron; Engineering Test Satellite VI; FETs; chip screening; high-power MMIC amplifier module; large-signal impedance; load-pull method; millimeter-wave intersatellite communication; production yield; solid-state power amplifier; Circuit testing; Design engineering; FETs; High power amplifiers; MMICs; Millimeter wave communication; Power engineering and energy; Reliability engineering; Satellites; Solid state circuits;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
