Title :
Evaluation of three-level rectifiers for low-voltage utility applications
Author :
Teichmann, Ralph ; Malinowski, Mariusz ; Bernet, Steffen
Author_Institution :
GE Global Res., Niskayuna, NY, USA
fDate :
4/1/2005 12:00:00 AM
Abstract :
This paper evaluates the benefits of three-level topologies as alternatives to two-level topologies in low-voltage converters primarily operated in rectifier mode. The main evaluation aspects are input filter size, semiconductor losses, maximum switching frequency, part count, initial cost, and life cycle cost. Semiconductor loss characteristics of various three-level topologies are discussed. A detailed converter comparison is based on a 100-kW 400-Vrms rectifier using commercially available Si insulated gate bipolar transistor modules.
Keywords :
costing; filters; insulated gate bipolar transistors; rectifying circuits; switching convertors; 100 kW; Si; cost evaluation; filter size; insulated gate bipolar transistor; life cycle cost; low-voltage converter; low-voltage utility application; multilevel converter; rectifier mode; semiconductor loss; switching frequency; three-level rectifier; Costs; Filters; Harmonic distortion; IEC standards; Insulated gate bipolar transistors; Matrix converters; Power conversion; Rectifiers; Switching frequency; Topology; Filter; losses; multilevel converter; rectifier;
Journal_Title :
Industrial Electronics, IEEE Transactions on
DOI :
10.1109/TIE.2005.843908