Title :
A comparison of the optical projection lithography simulators in SAMPLE and PROLITH
Author :
Crisalle, Oscar D. ; Keifling, Steven R. ; Seborg, Dale E. ; Mellichamp, Duncan A.
Author_Institution :
Dept. of Chem. & Nucl. Eng., California Univ., Santa Barbara, CA, USA
fDate :
2/1/1992 12:00:00 AM
Abstract :
This paper documents important algorithmic details not available in the open literature, and illustrates differences and similarities between the SAMPLE and PROLITH programs using representative lithography systems as examples. Numerical comparisons demonstrate that the aerial images calculated by SAMPLE and PROLITH are in generally good agreement. At high numerical resolution, the programs provide the same qualitative lithographic information, including latent images and edge profile results; however, significant degradation occurs at lower restorations. Adequate results are obtained using a vertical resolution smaller than one-twentieth of the theoretical standing-wave wavelength. Significant disagreement is found in the output of the post-exposure bake algorithms where SAMPLE predicts much lower standing-wave amplitude attenuation effects
Keywords :
electronic engineering computing; integrated circuit manufacture; optical images; photolithography; IC manufacture; PROLITH; SAMPLE; aerial images; critical dimensions; edge profile; high numerical resolution; image quality degradation; latent images; linewidth; optical projection lithography simulators; post-exposure bake algorithms; resist profiles; sidewall angle; standing-wave amplitude attenuation effects; standing-wave wavelength; vertical resolution; Chemical engineering; Computer aided manufacturing; Etching; Image resolution; Lithography; Mathematical model; Optical attenuators; Optical films; Printing; Resists;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on