In-situ monitoring of epitaxial film thickness by IEMI

Author

Yu, Fuzhong ; Zhou, Zhen-Hong ; Stout, Phil ; Reif, Rafael

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

Volume

5

Issue

1

fYear

1992

fDate

2/1/1992 12:00:00 AM

Firstpage

34

Lastpage

40

Abstract

In-situ measurement of epitaxial film thickness by infrared emission Michelson interferometer (IEMI) is presented. During in-situ experiments, epi wafers were heated inside an ultrahigh vacuum (UHV) single-wafer chemical vapor deposition (CVD) reactor or a furnace and the IR emission from the wafers was analyzed by the MI. In-situ thickness measurements have been made at temperatures ranging from 150 to 900°C for a lightly doped epi layer (0.5 Ω-cm) on top of a heavily doped substrate (0.001-0.002 Ω-cm). The accuracy of in-situ measurements is 2% of the actual epi layer thickness, compared with 0.3% for ex-situ measurements. This technique can be applied to real-time in-situ measurements of epi film growth and to real-time control of epi film thickness

Keywords

light interferometry; semiconductor epitaxial layers; semiconductor growth; thickness control; thickness measurement; vapour phase epitaxial growth; 150 to 900 degC; UHV single wafer CVD reactor; epitaxial film thickness; heavily doped substrate; in-situ measurements; infrared emission Michelson interferometer; lightly doped epi layer; real-time control; thickness measurement; Cleaning; Computerized monitoring; Inductors; Manufacturing automation; Optical films; Semiconductor films; Silicon; Substrates; Temperature; Thickness measurement;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.121974

Filename

121974