Title :
Comments, with reply, on "Generation of electromigration ground rules utilizing Monte Carlo simulation methods" by B. A. Beitman and A. Ito
Author_Institution :
Rome Lab., Griffiss AFB, NY, USA
Abstract :
For original paper see ibid., vol.4. no.1, pp.63-66 (Feb. 1991). The method employed by B.A. Beitman and A. Ito for determining appropriate maximum allowed currents in narrow conductors on VLSI circuits is examined. The literature reveals that the relationship between MTF and conductor geometry and between sigma and conductor geometry is much more complex than that employed in their simulation. The authors clarify the various points raised by the commenter.<>
Keywords :
Monte Carlo methods; VLSI; electromigration; failure analysis; integrated circuit technology; metallisation; Monte Carlo simulation; VLSI circuits; conductor geometry; electromigration ground rules; maximum allowed currents; mean time to failure; metal linewidth; narrow conductors; Aluminum; Conferences; Electromigration; Equations; Indium tin oxide; Integrated circuit interconnections; Monte Carlo methods; Physics; Semiconductor thin films; Transistors;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
