Post-Irradiation-Gate-Stress on Power MOSFETs: Quantification of Latent Defects-Induced Reliability Degradation

Author

Privat, A. ; Touboul, A.D. ; Michez, A. ; Bourdarie, S. ; Vaille, J.R. ; Wrobel, F. ; Arinero, R. ; Chatry, N. ; Chaumont, G. ; Lorfevre, E. ; Saigne, F.

Author_Institution

Univ. Montpellier 2, Montpellier, France

Volume

60

Issue

6

fYear

2013

fDate

Dec. 2013

Firstpage

4166

Lastpage

4174

Abstract

Electrical characterizations are used to understand power MOSFETs failure mechanisms after heavy ion irradiation. Results indicate that both bias levels and impact localization of heavy ion are important parameters for SEGR triggering or latent defect formation. This work addresses the limits of the post-irradiation gate stress relevance used for Power MOSFETs space qualification.

Keywords

failure analysis; power MOSFET; radiation hardening (electronics); semiconductor device reliability; SEGR triggering; electrical characterizations; heavy ion impact localization; latent defect formation; latent defects-induced reliability degradation quantification; post-irradiation gate stress; post-irradiation-gate-stress; power MOSFET failure mechanisms; power MOSFET space qualification; Degradation; Electric breakdown; Electric fields; MOSFET; Radiation effects; Reliability; Heavy ion; SEGR; latent defect; post-irradiation-gate-stress; power MOSFET; reliability;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2013.2287974

Filename

6678308